An above IC MEMS RF switch
| Autor: | Guillaume Bouche, Didier Belot, Pascal Ancey, S. Boret, C. Billard, Daniel Saias, P. Robert |
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| Rok vydání: | 2003 |
| Předmět: |
Microelectromechanical systems
Engineering business.industry Electrical engineering Control reconfiguration Integrated circuit BiCMOS law.invention RF switch Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electronic engineering Insertion loss Radio frequency Electrical and Electronic Engineering Transceiver business |
| Zdroj: | IEEE Journal of Solid-State Circuits. 38:2318-2324 |
| ISSN: | 0018-9200 |
| Popis: | Addressing reconfiguration of radio frequency (RF) systems might require high performance integrated RF switching capabilities. In this regard, a particular design experience of an integrated circuit (IC) monolithically integrated microelectromechanical systems (MEMS) ohmic switch is reported here. Applications at 2 GHz have been targeted. The MEMS device was processed on top of a 0.25-/spl mu/m standard BiCMOS wafer including the switch IC driver. An extensive RF characterization has been made. The switch exhibits at 2 GHz a 0.18-dB insertion loss and a 57-dB isolation level. This realization opens the way to further designs of reconfigurable architectures for multiband and multistandard mobile terminals. |
| Databáze: | OpenAIRE |
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