The Ferroelectric Properties of (Na0.5K0.5)NbO3Thin Films Fabricated by rf-Magnetron Sputtering
| Autor: | Jae-Shin Lee, Ill Won Kim, Hai Joon Lee, Byung Moon Jin, Sun Hee Kang, Chang Won Ahn |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Potassium niobate Annealing (metallurgy) Analytical chemistry Coercivity Sputter deposition Condensed Matter Physics Polarization (waves) Ferroelectricity Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry visual_art visual_art.visual_art_medium Ceramic Thin film |
| Zdroj: | Ferroelectrics. 335:227-232 |
| ISSN: | 1563-5112 0015-0193 |
| DOI: | 10.1080/00150190600691460 |
| Popis: | Fatigue-free Na 0.5 K 0.5 NbO 3 (NKN) thin films were grown on Pt/Ti/SiO 2 /Si substrates by the radio frequency magnetron sputtering method. The addition of enriched Na 2 CO 3 and K 2 CO 3 into the NKN ceramic target was necessary in order to compensate for a deficiency in the Na and K concentrations in the film. The remnant polarization (2P r) and the coercive field (2E c) of the NKN films annealed at 600°C were 32.2 μ C/cm 2 and 90 kV/cm at an applied field of 200 kV/cm, respectively. A leakage current density was obtained around 7.3×10−8 A/cm 2 at 150 kV/cm. The film showed fatigue-free characteristics under a ± 5 V bipolar square pulse of 1 MHz for up to 1.0×10 10 cycles. The NKN film prepared by radio frequency magnetron sputtering is an attractive alternative for applications involving nonvolatile ferroelectric random access memory (FRAM) devices. |
| Databáze: | OpenAIRE |
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