243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology
| Autor: | Volker Hurm, M. Zink, Hermann Massler, M. Riessle, M. Kuri, Tapani Narhi, Michael Schlechtweg, Oliver Ambacher, Rainer Weber, Arnulf Leuther, Axel Tessmann, H.-P. Stulz |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Coplanar waveguide Amplifier Integrated circuit High-electron-mobility transistor Noise figure Low-noise amplifier law.invention law Electronic engineering Insertion loss Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | International Journal of Microwave and Wireless Technologies. 6:215-223 |
| ISSN: | 1759-0795 1759-0787 |
| DOI: | 10.1017/s1759078714000166 |
| Popis: | Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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