$hboxN_2$-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
| Autor: | Seongjae Lee, In-Bok Baek, Myung-Sim Jeon, Chel-Jong Choi, Moongyu Jang, Byoungchul Park, Yarkyeon Kim |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Annealing (metallurgy) Subthreshold conduction business.industry Schottky barrier Electrical engineering Schottky diode chemistry.chemical_element Electronic Optical and Magnetic Materials Erbium Platinum silicide chemistry.chemical_compound chemistry MOSFET Silicide Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 53:1821-1825 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2006.876575 |
| Popis: | Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N2 annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 mum to 23 nm. Also, N2 annealing is applied to enhance the SB-MOSFETs' subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime |
| Databáze: | OpenAIRE |
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