Schottky Source/Drain Ge Metal–Oxide–Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
| Autor: | Keisuke Yamamoto, Dong Wang, Syuta Kojima, Keita Sakamoto, Haigui Yang, Kenji Harada, Takeshi Yamanaka, Hiroshi Nakashima, Takahiro Sada |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Schottky barrier Transistor General Engineering General Physics and Astronomy Schottky diode chemistry.chemical_element law.invention Metal Oxide semiconductor chemistry Sputtering law visual_art visual_art.visual_art_medium Optoelectronics Field-effect transistor business Tin |
| Zdroj: | Applied Physics Express. 5:051301 |
| ISSN: | 1882-0786 1882-0778 |
| DOI: | 10.1143/apex.5.051301 |
| Popis: | Metal/Ge contacts with high Schottky barrier heights on p- and n-Ge substrates could be formed using direct sputter depositions from TiN and Hf, respectively. The barrier heights were 0.53 and 0.60 eV for the p- and n-Ge substrates, respectively, which are available to source/drains (S/Ds) in Schottky n- and p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). We fabricated the n- and p-MOSFETs and demonstrated their operation. In particular, the n-MOSFET operation is the first demonstration of S/D using directly contacted metal/Ge. This work opens a method for embodying Schottky S/D Ge complementary MOS devices. |
| Databáze: | OpenAIRE |
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