Transparent non-volatile memory device using silicon quantum dots
| Autor: | Nae-Man Park, Woo-Seok Cheong, Kyung-Hyun Kim, Jaeheon Shin, Bosul Kim |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors Hybrid silicon laser business.industry Quantum point contact Silicon on insulator Strained silicon Quantum dot solar cell Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Oxide thin-film transistor Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Silicon nitride chemistry Quantum dot laser Optoelectronics business |
| Zdroj: | Electronic Materials Letters. 9:467-469 |
| ISSN: | 2093-6788 1738-8090 |
| DOI: | 10.1007/s13391-013-0028-y |
| Popis: | A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum dot film had a high optical transmittance of over 95% at 550 nm with a thickness of 50 nm. A large hysteresis curve was observed in a current-voltage measurement. When we increased the voltage sweep range, electrons were charged into the silicon quantum dots because of the electrical n-type channel in an oxide thin film transistor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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