Smoothening of Cu films grown on Si(001)

Autor:	Yongning Sheng, Rosa A. Lukaszew, Roy Clarke, Ctirad Uher
Rok vydání:	2000
Předmět:	Surface diffusion Physics and Astronomy (miscellaneous) Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Surface finish Epitaxy Copper law.invention Crystallography chemistry.chemical_compound Electron diffraction chemistry law Silicide Scanning tunneling microscope
Zdroj:	Applied Physics Letters. 76:724-726
ISSN:	1077-3118 0003-6951
Popis:	We report an in situ study of the molecular-beam epitaxy growth and annealing of Cu(001) films grown on hydrogen-terminated Si(001) substrates, resulting in a promising approach to achieve smooth epitaxial morphology. Using correlated reflection high-energy electron diffraction and scanning tunneling microscopy data, we find a temperature interval below the onset of silicide formation where a dramatic smoothening of the epitaxial Cu surfaces occurs. Our measurements indicate that a reduction in roughness is possible in this regime because the annealing is controlled by lateral diffusion kinetics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd5c2b98fcc7573c196dab6488109e34 https://doi.org/10.1063/1.125874 Zobrazit plný text záznamu