A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing
| Autor: | Andrea Ingenito, Philipp Löper, Matthieu Despeisse, Quentin Jeangros, Christophe Allebe, Philippe Wyss, Mario Lehmann, Christophe Ballif, Jörg Horzel, Josua Stuckelberger, Iris Mack, Franz-Josef Haug, X. Niquille, Gizem Nogay |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Passivation Silicon business.industry Open-circuit voltage chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Hybrid solar cell 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Electronic Optical and Magnetic Materials law.invention Stack (abstract data type) chemistry law Solar cell Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Journal of Photovoltaics. 10:1262-1269 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2020.3006979 |
| Popis: | We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of layers deposited in one single run by plasma-enhanced chemical vapor deposition. The layers of the stack were tailored to protect the interfacial oxide layer, to act as a source for boron diffusion into the wafer and to connect to the external metallisation with low contact resistivity. We found that this stack tolerated annealing at 900 °C over a wide range of dwell times: for 15 min anneals we obtained dark saturation current densities (Jo) as low as 10 fA·cm−2 (after hydrogenation) and after 12-fold increase of the annealing time to 180 min, J0 was only increased to 12 fA·cm−2. These values corresponded to implied open circuit voltages ( i Voc) of 718 and 715 mV, respectively. To test passivating rear contacts under realistic operation conditions, we combined them with an n-type heterojunction into hybrid solar cells. With conversion efficiencies abovementioned 22% and Voc > 705 mV, these devices demonstrated high level of rear surface passivation. Finally, we demonstrated the integration of the hole selective rear contact with a POCl3 diffusion process. To this end, we added a phosphorus diffusion barrier to our layer stack by depositing one additional layer of amorphous SiOx on top of the stack. For symmetric samples with this layer structure on both sides, we observed i Voc values of 714 and 712 mV on n- and p-type silicon wafers after hydrogenation, respectively. Co-diffused cells with POCl3 front diffused emitter and rear passivating contact resulted so far in efficiencies of 20.4% and 20.1% for n- and p-type wafers, respectively. |
| Databáze: | OpenAIRE |
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