| Popis: |
The lithography process for implant layer will be more difficult beyond 22nm node. Current method, TARC/ resist stacks, resist/ DBARC stacks and resist/ BARC with etching process, can't meet manufacture requirement. How to solve this issue will be very important topic. In this study, we evaluated resist/ BARC stacks without etching. We call this process "direct implant through BARC process". We focused on depth profile of implant ion in substrate after direct implant through BARC process. We evaluated dependency between ion depth profile and BARC property. As a result, we found out BARC thickness had a big impact on ion depth profile and component of BARC was injected into substrate. We discussed modification of substrate using component of BARC. |
