Optoelectronic Readout of STT-RAM Memory Cells Using Plasmon Drag Effect

Autor: Shafiqul Islam, Mohammad Wahiduzzaman Khan, Dan Shi, Ozdal Boyraz, Ilya Krivorotov, Eric Montoya, Parinaz Sadri-Moshkenani, Nader Bagherzadeh
Rok vydání: 2021
Předmět:
Zdroj: Conference on Lasers and Electro-Optics.
Popis: An optoelectronic readout method for reading the state of STT-RAM cells based on plasmon drag effect is proposed. Our simulations show that the proposed scheme can achieve up to 29.6 Gbit/sec readout speed.
Databáze: OpenAIRE