Optoelectronic Readout of STT-RAM Memory Cells Using Plasmon Drag Effect
Autor: | Shafiqul Islam, Mohammad Wahiduzzaman Khan, Dan Shi, Ozdal Boyraz, Ilya Krivorotov, Eric Montoya, Parinaz Sadri-Moshkenani, Nader Bagherzadeh |
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Rok vydání: | 2021 |
Předmět: | |
Zdroj: | Conference on Lasers and Electro-Optics. |
Popis: | An optoelectronic readout method for reading the state of STT-RAM cells based on plasmon drag effect is proposed. Our simulations show that the proposed scheme can achieve up to 29.6 Gbit/sec readout speed. |
Databáze: | OpenAIRE |
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