Characterization of Dopant Interdiffusion and Power Reduction on TiSi2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor

Autor:	Jiro Ida, Atsushi Ohtomo
Rok vydání:	1998
Předmět:	Materials science Dopant business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Dissipation Reduction (complexity) CMOS chemistry Optoelectronics Electrical measurements business Boron Layer (electronics) Voltage
Zdroj:	Japanese Journal of Applied Physics. 37:1674
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.37.1674
Popis:	The TiSi2 local wiring technology has been newly characterized from the viewpoints of dopant interdiffusion and power reduction. It was found that only the p+/n junction degrades when TiSi2 local wiring connects the n+ layer and p+ layer. The results of electrical measurements using a set of new test patterns suggest the reason to be that boron does not diffuse from TiSi2 to Si due to the high efficiency of TiB formation. More than a 20% reduction in power dissipation at a low-power supply voltage of 1 V was obtained, which demonstrates that the scheme is promising for low-power sub-half-micron complementary metal oxide semiconductor.
Databáze:	OpenAIRE
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