Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs

Autor:	Adel Kalboussi, S. Bouzgarrou, Abdelkader Souifi, Na. Sghaier, M.M. Ben Salem
Rok vydání:	2008
Předmět:	Biomaterials Hysteresis Materials science Mechanics of Materials business.industry Layer interface Optoelectronics Bioengineering High-electron-mobility transistor business
Zdroj:	Materials Science and Engineering: C. 28:676-679
ISSN:	0928-4931
DOI:	10.1016/j.msec.2007.10.075
Popis:	The aim of this work is to study the origin of parasitic effects observed on the output characteristics of InAlAs/InGaAs/InP HEMTs with various buffer layers. I ds − V ds measurements as a function of the temperature have first been performed. Several anomalies were observed such as kink and hysteresis effects. C-DLTS measurements have also been performed. From the obtained results, we have established a strong correlation between parasitic effects observed on the output characteristics and deep levels located near the buffer layer interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd405622ebe74255c77e63e4f1cd305b https://doi.org/10.1016/j.msec.2007.10.075 Zobrazit plný text záznamu Full Text from ScienceDirect