Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

Autor:	V. V. Chaldyshev, I. A. Bobrovnikova, M. D. Vilisova, L. G. Lavrentieva, V. V. Preobrazhenskii, I. V. Ivonin
Rok vydání:	2006
Předmět:	Materials science business.industry Annealing (metallurgy) education General Physics and Astronomy Optoelectronics Optically active business Epitaxy Flux ratio Molecular beam epitaxy
Zdroj:	Russian Physics Journal. 49:1334-1343
ISSN:	1573-9228 1064-8887
DOI:	10.1007/s11182-006-0263-x
Popis:	The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of growth surface, internal structure, type, and concentration of electrically-and optically active defects is analyzed. A comparison is made between the defect formation processes occuring during the epitaxial growth and post-growth annealing of the layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd3ffaadf134750239fcea405f7ad33e https://doi.org/10.1007/s11182-006-0263-x Zobrazit plný text záznamu Plný text ve formátu PDF