| Autor: |
Shen Xue-Chu, Shi Guo-Liang, Liu Pu-Lin, Zhou Tao, Chen Zhong-hui, Huang Xing-liang, Lu Wei |
| Rok vydání: |
1994 |
| Předmět: |
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| Zdroj: |
Acta Physica Sinica (Overseas Edition). 3:453-459 |
| ISSN: |
1004-423X |
| Popis: |
We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2 K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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