Fermi level pinning and band bending in δ-doped BaSnO3
| Autor: | Hyeongmin Cho, Kookrin Char, Youjung Kim |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Surface (mathematics) Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Doping Macroscopic quantum phenomena 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Layer thickness Condensed Matter::Materials Science Band bending Condensed Matter::Superconductivity Fermi level pinning 0103 physical sciences Condensed Matter::Strongly Correlated Electrons Boundary value problem 0210 nano-technology Semiconductor heterostructures |
| Zdroj: | Applied Physics Letters. 118:052101 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0042515 |
| Popis: | Various δ-doped semiconductor heterostructures have been effectively used for devices at room temperature and for quantum phenomena at low temperatures. Here, we use BaSnO3 and investigate its δ-doped system, focusing on its band bending and surface boundary conditions. We measured the two-dimensional carrier density (n2D) of the δ-doped BaSnO3 system of various thicknesses and doping levels. We also studied the effect of the BaSnO3 capping layer thickness on n2D. We show that the δ-doped BaSnO3 system can be very well described by band bending with the aid of the Poisson–Schrodinger simulation. At the same time, the capping layer thickness dependence of n2D reveals how the boundary condition on the surface of La-doped BaSnO3 evolves as a function of its capping layer thickness. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|