| Autor: |
Madhulika Korde, G. Andrew Antonelli, Alain C. Diebold, Aelan Mosden, Nick Keller, Subhadeep Kal, Cheryl Alix |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV. |
| DOI: |
10.1117/12.2584751 |
| Popis: |
Here, we report the measurement of the dielectric spacer etch process for nanowire and nanosheet FET processes. A previously described Nanowire Test Structure (NWTS) was used for this study.[1, 2, 3] This structure has alternating Si/Si1-xGex/…/Si multilayers. Subsequent to the selective etching of the Si1-xGex layers (cavity etch), a silicon nitride (SiN) dielectric layer was deposited on the NWTS. Here we report on the use of Mueller Matrix Spectroscopic Ellipsometry based Scatterometry (MMSE) to measure the thickness of the SiN dielectric layer after deposition and after trim etch steps. Four different amounts of trim etch were characterized. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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