GaN Epitaxial Layer Grown with Conductive AlxGa1−xN Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition
| Autor: | Byeongchan So, Kyungbae Lee, Kyungjae Lee, Cheon Heo, Jaedo Pyeon, Kwangse Ko, Jongjin Jang, Okhyun Nam |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Biomedical Engineering Analytical chemistry Bioengineering General Chemistry Chemical vapor deposition Condensed Matter Physics Epitaxy Buffer (optical fiber) Metal Crystal Sic substrate visual_art visual_art.visual_art_medium General Materials Science Layer (electronics) Electrical conductor |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 16:4914-4918 |
| ISSN: | 1533-4899 1533-4880 |
| DOI: | 10.1166/jnn.2016.12256 |
| Popis: | This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer. |
| Databáze: | OpenAIRE |
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