Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Autor:	Chenlu Wang, Qinglong Yan, Chunxu Su, Sami Alghamdi, Emad Ghandourah, Zhihong Liu, Xin Feng, Weihang Zhang, Kui Dang, Yingmin Wang, Jian Wang, Jincheng Zhang, Hong Zhou, Yue Hao
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 44:380-383
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2023.3237598
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd23801733a63c47dc162013071a684c https://doi.org/10.1109/led.2023.3237598 Zobrazit plný text záznamu