Three advanced designs of micro-pixel avalanche photodiodes: Their present status, maximum possibilities and limitations

Autor:	A. G. Olshevski, I. M. Zheleznykh, I. Chirikov, A. Novikov, Z. Sadygov
Rok vydání:	2006
Předmět:	Physics Nuclear and High Energy Physics Pixel Physics::Instrumentation and Detectors business.industry Process (computing) Avalanche photodiode law.invention Matrix (mathematics) Optics Silicon photomultiplier Single-photon avalanche diode law Wafer Resistor business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 567:70-73
ISSN:	0168-9002
DOI:	10.1016/j.nima.2006.05.215
Popis:	Novel types of micro-pixel avalanche photodiodes (MAPDs) and their principle of performance are analyzed. The first design contains a common silicon wafer on which a matrix of independent p–n junctions (micro-pixels) with individual surface resistors are created. The individual resistors provide a local suppression of the avalanche process and discharge each micro-pixel to a common metal grid (electrode). The second design is an avalanche photodiode with independent micro-pixels in which the local suppression of the avalanche process is carried out due to the limited conductivity of individual surface drift channels formed along the silicon–silicon oxide boundary. This design is considered as a prototype for a future super-fast avalanche CCD matrix capable to work in a single-photon detection mode. The third design contains a matrix of deep buried multilayer pixels with an individual suppression of the avalanche process in independent vertical channels.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd19007b5e2e26cbf4d451ae5712cd3c https://doi.org/10.1016/j.nima.2006.05.215 Zobrazit plný text záznamu Full Text from ScienceDirect