12 W broad area semiconductor amplifier with diffraction limited optical output

Autor:	David G. Mehuys, Donald R. Scifres, Joseph F. Weller, David F. Welch, Lew Goldberg
Rok vydání:	1991
Předmět:	Diffraction Optical amplifier Materials science business.industry Amplifier Optical communication Near and far field Semiconductor device Semiconductor laser theory Gallium arsenide chemistry.chemical_compound Optics chemistry Optoelectronics Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 27:927-929
ISSN:	1350-911X
DOI:	10.1049/el:19910580
Popis:	Broad area travelling wave GaAlAs SQW optical amplifiers have been fabricated and characterised. Using a 600 μm wide and a 1000 μm long double pass amplifier, 12 W of peak pulsed output power was achieved with a 0.08° wide diffraction limited far-field lobe. Small signal gain of 31 dB was measured in a 400 μm wide active area device.
Databáze:	OpenAIRE
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