Ge Diffusion in SnTe Crystal

Autor: Lada V. Yashina, V.B. Bobruiko, D.V. Safonov, O.E. Kaportseva, V. I. Shtanov, Tatyana B. Shatalova, V.F. Kozlovsky
Rok vydání: 1998
Předmět:
Zdroj: MRS Proceedings. 527
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-527-429
Popis: This work is devoted to the study of Ge diffusion in crystalline Sn1-δTe1+8 with δ=0.0065±0.0008 in temperature range T=878-973 K by electron probe microanalysis and layer by layer X-ray analysis. For the latter lattice constant dependence on composition was determined: a(Å)=a(SnTe)-(0.368±0.008)× where 0
Databáze: OpenAIRE
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