Synthesis of La2S3 Thin Films by Sulfurization of LaCl3 and CS(NH2)2
| Autor: | Yoichiro Uemura, Shinji Hirai, Michihiro Ohta, Kazuyoshi Shimakage, Toshiyuki Nishimura, Hideyasu Asahi |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Mechanical Engineering Inorganic chemistry Substrate (chemistry) Atmospheric temperature range Condensed Matter Physics Dip-coating chemistry.chemical_compound Tetragonal crystal system Thiourea chemistry Mechanics of Materials Phase (matter) General Materials Science Thin film Layer (electronics) Nuclear chemistry |
| Zdroj: | MATERIALS TRANSACTIONS. 47:1436-1439 |
| ISSN: | 1347-5320 1345-9678 |
| DOI: | 10.2320/matertrans.47.1436 |
| Popis: | La 2 S 3 thin films were prepared by dipping the substrates in methanol solutions of LaCl 3 ·7H 2 O and CS(NH 2 ) 2 , followed by sulfurization with CS 2 gas in the temperature range of 773-1073 K. The effects of the substrate and the mole ratio of LaCl 3 ·7H 2 O to CS(NH 2 ) 2 on the phase formation after sulfurization were investigated. When the mole ratio of LaCl 3 ·7H 2 O to CS(NH 2 ) 2 was 2:3, the tetragonal β-La 2 S 3 coatings were obtained on silica glass and Mo substrates for sulfurization at 1073 K. On the other hand, the cubic γ-La 2 S 3 coating was obtained on a soda-lime glass substrate for sulfurization at 973 K. The thin films on Ta and Ti substrates were comprised of β-La 2 S 3 and γ-La 2 S 3 phases for sulfurization at 1073 K. The LaS 2 phase was identified as an intermediate product of sulfurization at about 873 K. When the mole ratio of LaCl 3 ·7H 2 O to CS(NH 2 ) 2 was 1: I, the γ-La 2 S 3 coating was also obtained on silica glass substrate for sulfurization at 1073 K. Since the gaseous phases formed during sulfurization pass through the La 2 S 3 layer, the thin films obtained were porous. |
| Databáze: | OpenAIRE |
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