Near infrared dark-field microscopy with video for studying defects in III-V compound materials

Autor:	J P Fillard, P C Montgomery
Rok vydání:	1990
Předmět:	Microscope Materials science Silicon business.industry Applied Mathematics Near-infrared spectroscopy chemistry.chemical_element Dark field microscopy law.invention Optics Halogen lamp chemistry law Microscopy Digital image processing Dislocation business Instrumentation Engineering (miscellaneous)
Zdroj:	Measurement Science and Technology. 1:120-125
ISSN:	1361-6501 0957-0233
DOI:	10.1088/0957-0233/1/2/003
Popis:	A system is described using near infrared dark-field microscopy (DFM) for the analysis of defects in III-V compound materials. The microscope uses a halogen bulb light source and a silicon vidicon camera detector. High-contrast images of defects are shown as bright detail on a dark background. For the same view, DFM gives image detail contrast as high as 100%, compared with 25% in bright-field illumination. Digital image processing is used for improving the presentation of results. Individual point scatterers of 0.5-3 mu m in size, interpreted as being due to microprecipitates decorating dislocations, are shown in various substrates of GaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fcf936a11a5d0824aeec68a2e885ebb2 https://doi.org/10.1088/0957-0233/1/2/003 Zobrazit plný text záznamu