Lift-off process for nanoimprint lithography
| Autor: | Mariusz Graczyk, Eva-Lena Sarwe, Lars Montelius, Patrick Carlberg, Ivan Maximov, Marc Beck |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nanoimprint lithography law.invention Metal Resist Ashing chemistry law visual_art visual_art.visual_art_medium Electrical and Electronic Engineering Composite material Embossing Lithography Dissolution |
| Zdroj: | Microelectronic Engineering. :203-207 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(03)00072-8 |
| Popis: | We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 mn and dots with a diameter of sub 20 nm are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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