The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects

Autor:	Z. Sassi, Christian Gontrand, L. Kaabi, B. Remaki, J.C. Bureau, J. Ben Brahim, B. Balland, H. El Omari
Rok vydání:	1998
Předmět:	Deep-level transient spectroscopy Materials science Silicon Annealing (metallurgy) Oxide Ionic bonding chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Ion chemistry.chemical_compound Ion implantation chemistry Composite material Boron Instrumentation
Zdroj:	The European Physical Journal Applied Physics. 3:49-52
ISSN:	1286-0050 1286-0042
DOI:	10.1051/epjap:1998203
Popis:	The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of 11 B + ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the number of defects is practically reduced to one centre when the implantation is performed through an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA treatments, has been also investigated. The defect generation kinetics, under annealing treatments, is found strongly depending on 11 B + ionic number reaching the substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fcea128ff48b93fff0095343ec3515b3 https://doi.org/10.1051/epjap:1998203 Zobrazit plný text záznamu