Lithographic Feasibility of ESCAP Beyond Quarter Micron

Autor:	Debra Fenzel-Alexander, Don Hofer, Hiroshi Ito, Greg Breyta, Pete Hagerty, R. A. Dipietro, Ron Nunes, Will Conley, Jim Thackeray, S. Holmes
Rok vydání:	1996
Předmět:	Materials science Polymers and Plastics Excimer laser business.industry medicine.medical_treatment Organic Chemistry Numerical aperture Optics Resist Materials Chemistry medicine Volume reduction Diffusion (business) Stepper business Lithography
Zdroj:	Journal of Photopolymer Science and Technology. 9:557-572
ISSN:	1349-6336 0914-9244
DOI:	10.2494/photopolymer.9.557
Popis:	A production-worthy deep UV resist system built on the ESCAP platform is described. The resist consists of a thermally and hydrolytically stable resin and acid generator and thus can be heated at high temperatures forfree volume reduction, which provides stabilization toward airborne base contamination. The film densification in conjunction with the use of a bulky acid reduces acid diffusion during postexposure bake, contributing to high lithographic performance. Robust 0.25μm process latitudes have been demonstrated. Furthermore, the resist has produced excellent 175nm line/space images with a depth-of-focus of 0.3μm on a KrF excimer laser stepper with a numerical aperture of 0.60, indicating that the resist allows the use of the current exposure tool in the early 1 Gbit generation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fce82346f7288d945f45381b467dc36b https://doi.org/10.2494/photopolymer.9.557 Zobrazit plný text záznamu