Long-wavelength strained-layer quantum-well lasers
Autor: | Antoni S. Gozdz, T.P. Lee, Paul S. D. Lin, Bhadresh Pathak, Rajaram Bhat, Chung-En Zah, C. Caneau, F. Favire, Nicholas C. Andreadakis |
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Rok vydání: | 1992 |
Předmět: | |
Zdroj: | SPIE Proceedings. |
ISSN: | 0277-786X |
DOI: | 10.1117/12.137605 |
Popis: | We have studied the effect of strain on the laser threshold current density in the 1.3 and 1.55 micrometers wavelength regions using both GaInAsP/InP and AlGaInAs/InP material systems. Low threshold current densities have been obtained for both compressive- and tensile-strained quantum well lasers. We have also fabricated 20-wavelength distributed-feedback laser arrays using both compressive- and tensile-strained quantum well active layers. A wide optical gain spectrum and a sub-MHz linewidth have been demonstrated. |
Databáze: | OpenAIRE |
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