Long-wavelength strained-layer quantum-well lasers

Autor: Antoni S. Gozdz, T.P. Lee, Paul S. D. Lin, Bhadresh Pathak, Rajaram Bhat, Chung-En Zah, C. Caneau, F. Favire, Nicholas C. Andreadakis
Rok vydání: 1992
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.137605
Popis: We have studied the effect of strain on the laser threshold current density in the 1.3 and 1.55 micrometers wavelength regions using both GaInAsP/InP and AlGaInAs/InP material systems. Low threshold current densities have been obtained for both compressive- and tensile-strained quantum well lasers. We have also fabricated 20-wavelength distributed-feedback laser arrays using both compressive- and tensile-strained quantum well active layers. A wide optical gain spectrum and a sub-MHz linewidth have been demonstrated.
Databáze: OpenAIRE