Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications

Autor:	R.K. Kaneriya, Chiranjit Karmakar, Gunjan Rastogi, M.R. Patel, R.B. Upadhyay, Punam Kumar, A.N. Bhattacharya
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronic Engineering. 255:111724
ISSN:	0167-9317
DOI:	10.1016/j.mee.2022.111724
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fce212d0f6c7e65fddc48d02693d5ff6 https://doi.org/10.1016/j.mee.2022.111724 Zobrazit plný text záznamu Full Text from ScienceDirect