Nanofabrication of β-Ga2O3 nanowires for device implementation
| Autor: | William E. Stanchina, Susheng Tan, John R. Erickson |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES Fabrication Materials science Silicon media_common.quotation_subject Transistor Nanowire chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Nanolithography Gallium oxide chemistry law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Simplicity 0210 nano-technology Hardware_LOGICDESIGN media_common |
| Zdroj: | 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO). |
| Popis: | As beta-phase gallium oxide is gaining attention for potential application in electronic and optoelectronic devices, this paper addresses techniques for nanowire fabrication that offer the potential for low cost simplicity with the uniformity and reproducibility that are necessary for useful device implementation of these nanowires. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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