28nm STT-MRAM Array and Sense Amplifier
| Autor: | Andrew Marshall, H. J. Stiegler, Jin Woong Kwak |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Random access memory Magnetoresistive random-access memory Hardware_MEMORYSTRUCTURES Computer science Sense amplifier business.industry Electrical engineering 01 natural sciences Memory array Computer Science::Hardware Architecture Hardware_GENERAL Power consumption 0103 physical sciences Torque Parasitic extraction business |
| Zdroj: | MOCAST |
| Popis: | Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a replacement for currently used embedded non-volatile memory. We describe the characteristics of STT-MRAM and explore aspects of the memory array including trade-off in size, switching, read speed, temperature effects, layout, and power consumption. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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