Improvement of resistive memory switching in NiO using IrO2

Autor:	H. S. Kim, E. K. Yim, Myoung-Jae Lee, U-In Chung, I. K. Yoo, B. I. Ryu, J. E. Lee, D. C. Kim, I. G. Baek, S. E. Ahn, J. T. Moon, J. C. Park, S. O. Park, S. Seo, H. J. Kim
Rok vydání:	2006
Předmět:	Materials science Physics and Astronomy (miscellaneous) Nickel compounds business.industry Electrode Non-blocking I/O engineering Optoelectronics Noble metal engineering.material business Resistive random-access memory
Zdroj:	Applied Physics Letters. 88:232106
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2210087
Popis:	For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin IrO2 layers between NiO and electrodes. The role of thin IrO2 layers on NiO growth and memory switching stabilization are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fccade48a6a78cf9cd5034fa3f265342 https://doi.org/10.1063/1.2210087 Zobrazit plný text záznamu