Negative Magnetoresistivity from Electron-Electron Interaction Effect in Modulation Doped n-Channel Si/Si1?xGex Quantum Well Structures

Autor: Duncan K. Maude, D.-H. Shin, S.D. Kim, J. J. Harris, J.K. Rhee, S.K. Kim, J. C. Portal
Rok vydání: 2001
Předmět:
Zdroj: physica status solidi (b). 223:649-656
ISSN: 1521-3951
0370-1972
DOI: 10.1002/1521-3951(200102)223:3<649::aid-pssb649>3.0.co;2-0
Popis: Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si 0.7 Ge 0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, observed below 0.1 T, clearly shows the effect of electron-electron interactions.
Databáze: OpenAIRE