Negative Magnetoresistivity from Electron-Electron Interaction Effect in Modulation Doped n-Channel Si/Si1?xGex Quantum Well Structures
Autor: | Duncan K. Maude, D.-H. Shin, S.D. Kim, J. J. Harris, J.K. Rhee, S.K. Kim, J. C. Portal |
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Rok vydání: | 2001 |
Předmět: |
Silicon
Condensed matter physics Magnetoresistance Doping chemistry.chemical_element Astrophysics::Cosmology and Extragalactic Astrophysics Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Shubnikov–de Haas effect Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry Modulation Condensed Matter::Strongly Correlated Electrons Fermi gas Quantum well |
Zdroj: | physica status solidi (b). 223:649-656 |
ISSN: | 1521-3951 0370-1972 |
DOI: | 10.1002/1521-3951(200102)223:3<649::aid-pssb649>3.0.co;2-0 |
Popis: | Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si 0.7 Ge 0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, observed below 0.1 T, clearly shows the effect of electron-electron interactions. |
Databáze: | OpenAIRE |
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