In situ cleavage mechanism for semiconductor single crystals for ultrahigh-vacuum scanning tunneling microscope
| Autor: | S. I. Oreshkin, I. V. Radchenko, Vladimir N. Mantsevich, Vladimir I. Panov, D. A. Muzychenko, A. I. Oreshkin |
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| Rok vydání: | 2007 |
| Předmět: |
In situ
Materials science biology business.industry Nanotechnology Cleavage (crystal) Omicron biology.organism_classification Thermal conduction Electrochemical scanning tunneling microscope law.invention Scanning probe microscopy Semiconductor law Optoelectronics Scanning tunneling microscope business Instrumentation |
| Zdroj: | Instruments and Experimental Techniques. 50:129-132 |
| ISSN: | 1608-3180 0020-4412 |
| DOI: | 10.1134/s0020441207010198 |
| Popis: | A tecnique for cleaving semiconductor single crystals under ultrahigh-vacuum conditions is proposed. A system for in situ cleavage of samples for ultrahigh-vacuum scanning tunneling microscope (STM) has been developed. STM studies of the surfaces of InAs single crystals with n and p-type bulk conduction have been performed on an Omicron ultrahigh-vacuum facility. |
| Databáze: | OpenAIRE |
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