On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy
| Autor: | Sorab K. Ghandhi, Ishwara B. Bhat, N. R. Taskar |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Renewable Energy
Sustainability and the Environment Chemistry Inorganic chemistry Analytical chemistry Crystal growth Chemical vapor deposition Partial pressure Atmospheric temperature range Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Materials Chemistry Electrochemistry Thin film Group 2 organometallic chemistry |
| Zdroj: | Journal of The Electrochemical Society. 134:195-198 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2100404 |
| Popis: | In this paper are presented some experimental results to explain mechanisms involved in the growth of CdTe by organometallic vapor-phase epitaxy (OMVPE). A pyrolysis study of dimethylcadmium (DMCd) was conducted in an OMVPE reactor, in the temperature range 230/sup 0/-400/sup 0/C. It was found that dimethylcadmium decomposes above approximately 230/sup 0/C and the reaction is heterogeneous from 230/sup 0/ to 370/sup 0/C. CdTe growth was also studied over a range of temperature from 300/sup 0/ to 375/sup 0/C and for various reactor parameters. In all cases, the CdTe deposition rate was found to be closely related to the decomposition of dimethylcadmium. A model is presented to explain the CdTe growth at low temperatures where diethyltelluride is very stable. The growth of CdTe, using diethyltelluride and elemental cadmium, was demonstrated and supports the model. The growth rate of CdTe was studied as a function of the partial pressure of DMCd and DETe, and the results were explained in light of this growth model. |
| Databáze: | OpenAIRE |
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