Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO 2 film on InP substrate

Autor:	Y.L. Lam, Jian Liu, Zhisheng Yun, Boon S. Ooi, Y. Zhou, Yuen-Chuen Chan
Rok vydání:	2000
Předmět:	Materials science business.industry Annealing (metallurgy) General Chemistry Cracking Semiconductor Rapid thermal processing Perpendicular General Materials Science Composite material Amorphous silica business Volatility (chemistry) Sol-gel
Zdroj:	Applied Physics A: Materials Science & Processing. 70:341-343
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s003390050057
Popis:	In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450 °C, and that the crack patterns are all parallel or perpendicular to . The experimental results on the crack patterns in the sol-gel silica films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fcb3a9323f574fa4a66d64a6ab3df34b https://doi.org/10.1007/s003390050057 Zobrazit plný text záznamu Plný text ve formátu PDF