| Autor: |
Wayne Wang, Chun-Yu Wu, Chang-Feng Yang, Wen Ting Chu, Ming-Han Yang, Yung-Huei Lee, Arthur Hung, Ming Ta Yang, Ta-Chun Chien, Shih-Chi Tsai, Vincent Fan |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE Symposium on VLSI Technology. |
| DOI: |
10.1109/vlsitechnology18217.2020.9265060 |
| Popis: |
The read disturb performance and industrially applicable model of mega-bit level embedded RRAM with standard 28 nm select transistor are demonstrated in this study. At first, 100k endurance test on 0.5 Mb RRAM 1 T1R array is implemented and non-degraded memory window with high read disturb immunity results are acquired. Contrary to conventional analysis on major bits, the read disturb model is especially investigated on tail bits in this work. Furthermore, the read disturb performance for chip user condition with nano-second level pulse width is well emulated by long pulse, which provides a time-efficient way to evaluate read disturb performance at product level. As a consequence, the mega-bit 28 nm RRAM array in this work is able to sustain larger than 1 E 18 read counts at a rigorous fail criteria. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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