A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere
| Autor: | Matthew H. Ervin, Michael A. Derenge, Kenneth A. Jones, Shiva S. Hullavarad, K.W. Kirchner, Tsvetanka Zheleva, R. D. Vispute |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry Evaporation chemistry.chemical_element Condensed Matter Physics Nitrogen Electronic Optical and Magnetic Materials Pulsed laser deposition Ion implantation chemistry Materials Chemistry Sapphire Crystallite Electrical and Electronic Engineering |
| Zdroj: | Solid-State Electronics. 48:1867-1872 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2004.05.079 |
| Popis: | AlN deposited on 4H–SiC by pulsed laser deposition (PLD) did not noticeably deteriorate when it was annealed in an Ar atmosphere at 1500 °C for 30 min, but it contained numerous thermal etch pits when it was annealed at 1600 °C as determined by SEM and AFM, and it completely evaporated at the higher annealing temperatures thereby allowing the silicon to evaporate preferentially that produced a pitted SiC surface. When the AlN film was annealed in nitrogen for 30 min, the film formed a protective cover up to 1650 °C, and when a sapphire cover was employed, it protected the SiC surface up to 1700 °C. The AlN surface was altered when it was annealed in nitrogen by both the evaporation of N from the surface and reactions with the N in the atmosphere. This produced a rougher surface as determined by SEM and AFM that was composed of more randomly oriented crystallites as determined by X-ray and TEM analyses, but it still protected the SiC surface below. Thermodynamic calculations are in qualitative agreement with these analyses. |
| Databáze: | OpenAIRE |
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