Film deposition and UV curing process impact on ultralow-kdielectric for high performance Cu interconnects
| Autor: | Xun Gu, Hao Deng, Zheyuan Tong, Xuezhen Jing |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) 020209 energy General Engineering General Physics and Astronomy Modulus 02 engineering and technology Dielectric 01 natural sciences Scientific method 0103 physical sciences 0202 electrical engineering electronic engineering information engineering UV curing Deposition (phase transition) Composite material Porosity Shrinkage |
| Zdroj: | Japanese Journal of Applied Physics. 56:07KF01 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.56.07kf01 |
| Popis: | Ultralow-k (ULK) film deposition and UV curing process were studied to explore the effects on the mechanical, electrical and chemical properties of ULK dielectrics. UV curing process plays an important role to enhance the Young's modulus (mechanical performance) by increasing the formation of –Si–O–Si– cross-linking, and ULK film deposition with low film shrinkage ratio can form a robust porous SiOCH to avoid following integration process-induced damage on ULK dielectrics and also improve the device reliability performance significantly. |
| Databáze: | OpenAIRE |
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