Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region
| Autor: | Raisa Fabiha, Chinmoy Nath Saha, Md. Shafiqul Islam |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Subthreshold conduction Oxide Drain-induced barrier lowering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound Stack (abstract data type) chemistry Logic gate 0103 physical sciences Optoelectronics Double gate Field-effect transistor Electric potential 0210 nano-technology business |
| Zdroj: | 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC). |
| DOI: | 10.1109/r10-htc.2017.8288963 |
| Popis: | In this paper, we propose a two-dimensional analytical model of single material symmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor (DGS-JLFET) for subthreshold region. This model has been investigated and expected to improve subthreshold characteristics and minimize short channel effects. The characteristics of DGS-JLFET are compared with those of the single material symmetric Double Gate Junctionless Field Effect Transistor (DG-JLFET). Our proposed DGS-JLFET exhibits higher I on /I off ratio, less subthreshold swing (SS) and less drain induced barrier lowering (DIBL) when compared to DG-JLFET. |
| Databáze: | OpenAIRE |
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