Prebreakdown condition in selenium rectifiers

Autor:	A. Z. Efendiev, V. Z. Zhokhov
Rok vydání:	1969
Předmět:	Impact ionization Rectifier Materials science Zener effect Overvoltage Rise time Selenium rectifier General Physics and Astronomy Atmospheric temperature range Atomic physics Voltage
Zdroj:	Soviet Physics Journal. 9:57-60
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00818741
Popis:	This paper reports data from an experimental investigation of the prebreakdown and breakdown conditions of factory production selenium rectifiers in the temperature range from 100 ° to −196 ° C when a unit voltage pulse with steep leading edge (rise time about 10−8 sec) is applied to the rectifier in the non-conducting direction. Change in voltage across the rectifier and in current through it were recorded by a two-channel high-speed electronic oscilloscope. On the basis of this test data, the variation of discharge rise-time in the selenium p-n junction as a function of overvoltage and temperature was determined, the formation of current pulses was detected in the junction, both before and during breakdown in the temperature range from 100 ° to −196 ° C, and it was also established that breakdowns of selenium rectifier p-n junctions are due to joint action of the Zener effect and impact ionization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fc926c9fbc2aa8a3e9305e53034bf1cb https://doi.org/10.1007/bf00818741 Zobrazit plný text záznamu Full text from SpringerLink