BeO doping effect on the critical current density in Pb substituted Bi2212 crystals
Autor: | H. Sasakura, Osuke Miura, D. Ito |
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Rok vydání: | 2001 |
Předmět: |
Materials science
Flux pinning Condensed matter physics Field (physics) Doping Energy Engineering and Power Technology Flux Condensed Matter Physics Power law Electronic Optical and Magnetic Materials Crystal Magnetization Creep Condensed Matter::Superconductivity Physics::Space Physics Electrical and Electronic Engineering |
Zdroj: | Physica C: Superconductivity. :216-221 |
ISSN: | 0921-4534 |
DOI: | 10.1016/s0921-4534(01)00210-6 |
Popis: | BeO doping effect on flux pinning properties in Bi(Pb)2212 crystals were studied. Critical current densities for BeO 10 vol% doped crystals in self-field increased all over temperature region in comparison with BeO-free crystals. The second peak in magnetization curves was observed for BeO 2 vol% doped crystal in the temperature region from 20 to 40 K. Irreversibility field B irr for the 2 vol% BeO doped crystals improved in the temperature 40–77 K. The theoretical value of power law of the B irr to the temperature based on the flux creep theory is in good agreement to the experimental value in the region 15–60 K. |
Databáze: | OpenAIRE |
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