Growth of β-FeSi 2 and FeSi layers by reactive deposition using Sb-related intermetallic compounds

Autor:	Hirokazu Tatsuoka, Hiroshi Kuwabara, Tsutomu Koga, Tomotaka Suzuki, Alexander Bright, Ken Shimada
Rok vydání:	2000
Předmět:	Materials science Beta phase Metals and Alloys Intermetallic Mineralogy Surfaces and Interfaces Substrate (electronics) Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reactive deposition Reaction interface Chemical engineering Materials Chemistry Deposition (law)
Zdroj:	Thin Solid Films. 369:248-252
ISSN:	0040-6090
DOI:	10.1016/s0040-6090(00)00817-8
Popis:	β-FeSi 2 and FeSi layers were grown on Si substrates by deposition of Sb-related intermetallic compounds and simultaneous reaction with Si substrates. Higher quality epitaxialβ-FeSi 2 layers with smooth interfaces were obtained on the Si(111) substrates at the substrate temperatures ranging from 650 to 700°C in comparison to the layers grown by conventional reactive deposition epitaxy (RDE). Moreover, the growth mechanism of FeSi and Sb-related intermetallic compounds have been discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fc7b96789013ba7e89344842ca59ec94 https://doi.org/10.1016/s0040-6090(00)00817-8 Zobrazit plný text záznamu Full Text from ScienceDirect