Digital Etching of GaAs Materials: Comparison of Oxidation Treatments
| Autor: | Pascal Besson, Lukasz Borowik, Mickaël Rebaud, Virginie Enyedi, Laura Toselli, Marie Christine Roure, Eugénie Martinez |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Aqueous solution Condensation Inorganic chemistry Oxide 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Gallium arsenide chemistry.chemical_compound chemistry Etching (microfabrication) 0103 physical sciences Oxidizing agent General Materials Science 0210 nano-technology Spectroscopy Layer (electronics) |
| Zdroj: | Solid State Phenomena. 255:61-66 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.255.61 |
| Popis: | Oxidation of a GaAs surface was performed with liquid H2O2, gaseous O2 and O3 in order to identify the best solution for digital etching. The oxide layer formed with H2O2 is Garich and exhibits surface roughening which can be understood by oxide hydrolysis/condensation model. Roughening makes aqueous H2O2 irrelevant as an oxidizing agent for repeated oxidation steps. On the other hand, a smooth oxide layer can be obtained with gaseous O2 and O3. Thickness of the formed oxide layer is controlled by time exposure to the oxidizing agent. The nature of the oxide was analyzed by XRay Photo-electron Spectroscopy and is also timedependent. |
| Databáze: | OpenAIRE |
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