(Invited) Multiphonon Processes as the Origin of Reliability Issues

Autor:	M. Toledano-Luque, Franz Schanovsky, Ben Kaczer, Oskar Baumgartner, Markus Bina, Wolfgang Goes, Tibor Grasser
Rok vydání:	2013
Předmět:	Physics Reliability (semiconductor) Condensed matter physics Temperature instability Metastability Mechanism based Gate current Noise (electronics) AND gate
Zdroj:	ECS Transactions. 58:31-47
ISSN:	1938-6737 1938-5862
Popis:	Recently, correlated drain and gate current fluctuations have been observed in nano-scaled MOSFETs, indicating that their occurrence is linked to the same defect. One explanation for this observation can be given by the multi-state defect model, which has been developed to describe the hole capture and emission processes involved in the bias temperature instability (BTI). This model relies on a combination of metastable defect states and nonradiative multi-phonon transitions. Our detailed investigations demonstrate that the observed gate current fluctuations and their correlation with the drain noise can be well reproduced using a TAT mechanism based on the multi-state model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fc681d8be42ed39462f9cefb34d6d68a https://doi.org/10.1149/05807.0031ecst Zobrazit plný text záznamu