4488349 Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization
| Autor: | Teruyoshi Mihara, Koichi Murakami |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
Engineering
business.industry Anodizing Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Semiconductor device Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Semiconductor Hardware_GENERAL law Electrode Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Short circuit Voltage |
| Zdroj: | Microelectronics Reliability. 25:604 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/0026-2714(85)90379-8 |
| Popis: | A method of repairing shorts in parallel connected vertical semiconductor devices including a plurality of parallel-connected transistors comprises an anodizing step, before the electrodes are formed, in addition to the conventional manufacturing steps. Since defective semiconductor regions due to short circuit, poor withstand voltage or pin holes are insulated from the corresponding electrodes by an insulating material formed in the anodizing step, even if any of parallel-connected transistors are defective, the integrated circuit is usable, thus reducing the percentage of defectiveness of the vertical semiconductor devices in the assembly line production thereof. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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