Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure
| Autor: | Kuan-Po Lin, Chih-Hung Yen, Wen-Lung Chang, Kuo-Hui Yu, Kun-Wei Lin, Wen-Chau Liu |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Oscillation
business.industry Transconductance Transistor Doping Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Gallium phosphide Materials Chemistry Indium phosphide Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Current density |
| Zdroj: | Semiconductor Science and Technology. 15:643-647 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/15/6/328 |
| Popis: | A newly designed high-barrier-gate Ga0.51In0.49P/InxGa1-xAs/GaAs pseudomorphic transistor with a step-compositioned channel (SC2) and bottomside delta-doped sheet (BD2S) structure has been fabricated successfully and studied. For a 1×100 µm2 studied device, a high gate-to-drain breakdown voltage over 30 V is found. In addition, an available output current density up to 826 mA mm-1 at a high gate voltage of 2.5 V, a maximum transconductance of 201 mS mm-1 with a very broad transconductance operation regime of 3 V of gate bias (565 mA mm-1 of drain current density) and a high dc gain ratio of 575 are obtained, simultaneously. Meanwhile, the maximum values of the unity current-gain cut-off frequency fT and oscillation frequency fmax are 16 and 34 GHz, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|