Switching in amorphous elemental semiconductors, Si and Ge
| Autor: | J R Bosnell, C B Thomas |
|---|---|
| Rok vydání: | 1972 |
| Předmět: |
Amorphous semiconductors
Materials science Acoustics and Ultrasonics Dielectric strength Condensed matter physics Thermal runaway business.industry Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid law.invention Threshold voltage Crystallography Semiconductor law Electrode Crystallization business |
| Zdroj: | Journal of Physics D: Applied Physics. 5:L29-L31 |
| ISSN: | 0022-3727 |
| DOI: | 10.1088/0022-3727/5/4/103 |
| Popis: | Switching behaviour, rather than dielectric breakdown, is believed to occur in the amorphous elements Si and Ge. We have found that the threshold voltage is dependent on the composition of the electrodes. We have suggested that this dependence is related to the appropriate crystallization temperatures of these amorphous semiconductors sandwiched between certain metals. Crystallization occurs during the switching process and probably stabilizes the temperature after thermal runaway initiates a switching event. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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