Physical and Electrical Characteristics of Poly-Si/ZrO2/SiO2/Si MOS Structures

Autor: Kwan-Yong Lim, In-Seok Yeo, Dae-Gyu Park, Il-Sang Choi, Jinwon Park, Heung-Jae Cho, Jung-Kyu Ko, Hee-koo Yoon, Joong-Jung Kim, Jun-Mo Yang, Jae-Young Kim
Rok vydání: 2001
Předmět:
Zdroj: Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2001.b-8-3
Databáze: OpenAIRE