| Autor: |
G. Beddies, O.P. Pavlova, O.V. Chukhrai, Yu. N. Makogon, Anna Mogilatenko |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
Defect and Diffusion Forum. 264:155-158 |
| ISSN: |
1662-9507 |
| Popis: |
Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(001) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3·10-4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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