High-Power ${X}$ -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic
| Autor: | Weijun Luo, Pengpeng Sun, Xinyu Liu, Hui Liu, Zongjing Zhang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Gate dielectric Phase (waves) Electrical engineering X band 020206 networking & telecommunications Gallium nitride 02 engineering and technology 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Return loss Insertion loss Optoelectronics Electrical and Electronic Engineering business Phase shift module |
| Zdroj: | IEEE Transactions on Electron Devices. 64:3627-3633 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2727141 |
| Popis: | A high-power ${X}$ -band GaN-based 5-b digital phase shifter with control logic circuit on-chip is demonstrated for the first time, which is implemented with monolithic integrated GaN E/D HEMTs fabrication process. Gate trench etching together with Al2O3 as gate dielectric is used to form the gate of the E-mode GaN HEMTs. Switched filter and high-pass/low-pass topology are used to design the 11.25°/22.5° and 45°/90°/180° phase shifters, respectively. A novel three stages control logic circuit is described and characterized. The fabricated 5-b phase shifter demonstrates an rms phase error less than 4.5°, an rms amplitude error less than 0.6 dB, an insertion loss less than 11 dB, and an input–output return loss better than −10 dB across 8.5–11.5 GHz for all 32 states. In addition, the phase shifter exhibits a typical ${P}_{{1~ \text {dB}}}$ input power of 34.8 dBm in the continuous wave power handling capability measurement at 9 GHz. |
| Databáze: | OpenAIRE |
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